A semipolar (101̄ 3̄) InGaN/GaN green light emitting diode

Materials Research Society Symposium Proceedings

Volumn 892, Issue , 2006, Pages 465-470

  Sharma, Rajat ^a   Pattison, P Morgan ^a   Baker, Troy J ^a,b   Haskell, Benjamin A ^a,b   Farrell, Robert M ^a   Masui, Hisashi ^a   Wu, Feng ^a,b   Denbaars, Steven P ^a,b   Speck, James S ^a,b   Nakamura, Shuji ^a,b  

^a University of California   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTROLUMINESCENCE; GALLIUM NITRIDE; LIGHT EMITTING DIODES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; QUANTUM EFFICIENCY; VAPOR PHASE EPITAXY;

HYDRIDE VAPOR PHASE EPITAXY (HVPE); OPERATING VOLTAGE; POLARIZATION ANISOTROPY;

SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

EID: 33646407843     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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