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Volumn 181, Issue 3, 1997, Pages 210-217
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Model analysis of segregation phenomena for silicon single crystal growth from the melt
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Author keywords
Czochralski; Model; Phosphorus; Segregation; Silicon; Solidification
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Indexed keywords
CRYSTAL IMPURITIES;
CRYSTAL ORIENTATION;
MATHEMATICAL MODELS;
SEMICONDUCTING SILICON;
SEMICONDUCTOR GROWTH;
SINGLE CRYSTALS;
SOLIDIFICATION;
ENERGY BARRIER;
UNDERCOOLING;
CRYSTAL GROWTH FROM MELT;
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EID: 0031275676
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/S0022-0248(97)00277-7 Document Type: Article |
Times cited : (4)
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References (21)
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