Anisotropic vapor phase growth of Ga2O3 crystalline nanobelts

Journal of Crystal Growth

Volumn 290, Issue 2, 2006, Pages 585-591

  Lan, Y C ^a   Crimp, M A ^a   Zhang, J M ^a  

^a Michigan State University   (United States)

Author keywords

A1. Crystal morphology; B1. Nanomaterials; B2. Semiconducting materials

Indexed keywords

AMMONIA; ANISOTROPY; CRYSTALLINE MATERIALS; ELECTRON MICROSCOPY; MORPHOLOGY; VAPOR PHASE EPITAXY; X RAY DIFFRACTION ANALYSIS;

CHEMICAL MICROANALYSIS; CRYSTAL MORPHOLOGY; NANOMATERIALS;

NANOSTRUCTURED MATERIALS;

EID: 33646345625     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2005.12.081     Document Type: Article

References (31)

1. Harwig T., and Kellendonk F. J. Solid State Chem. 24 (1978) 255
2. Binet L., and Gourier D. J. Phys. Chem. Solids 59 (1998) 1241
3. Wu X.C., Song W.H., Huang W.D., Pu M.H., Zhao B., Sun Y.P., and Du J.J. Chem. Phys. Lett. 328 (2000)
4. Nogales E., Méndez B., and Piqueras J. Appl. Phys. Lett. 86 (2005) 113112
5. Li Z., Groot C., and Moodera J.H. Appl. Phys. Lett. 77 (2000) 3630
6. Choi Y.C., Kim W.S., Park Y.S., Lee S.M., Bae D.J., Lee Y.H., Park G.S., Choi W.B., Lee N.S., and Kim J.M. Adv. Mater. 12 (2000) 746
7. Park G.S., Choi W.B., Kim J.M., Choi Y.C., Lee Y.H., and Lim C.B. J. Crystal Growth 220 (2000) 494
8. Han W.Q., Redlich P.K., Ernst F., and Ruhle M. Solid State Commun. 115 (2000) 527
9. Gundiah G., Govindaraj A., and Rao C.N.R. Chem. Phys. Lett. 351 (2002) 189
10. Zhang H.Z., Kong Y.C., Wang Y.Z., Du X., Bai Z.G., Wang J.J., Yu D.P., Ding Y., Hang Q.L., and Feng S.Q. Solid State Commun. 109 (1999) 677
11. Liang C.H., Meng G.W., Wang G.Z., Wang Y.W., and Zhang L.D. Appl. Phys. Lett. 78 (2001) 3202
12. Kim B.C., Sun K.T., Park K.S., Im K.J., Noh T., Sung M.Y., and Kim S. Appl. Phys. Lett. 80 (2002) 479
13. Dai Z.R., Pan Z.W., and Wang Z.L. J. Phys. Chem. B 106 (2002) 902
14. Xiang X., Cao C.B., Guo Y.J., and Zhu H.S. Chem. Phys. Lett. 378 (2003) 660
15. Lee J.S., Park K., Nahm S., Kim S.W., and Kim S. J. Crystal Growth 244 (2002) 287
16. Zhang J., and Zhang L. Solid State Commun. 122 (2002) 493
17. Pan Z.W., Dai Z.R., and Wang Z.L. Science 291 (2001) 1947
18. Geng B.Y., Zhang L.D., Meng G.W., Xie T., Peng X.S., and Lin Y. J. Crystal Growth 259 (2003) 291
19. Kim H.W., and Kim N.H. Appl. Phys. A 80 (2005) 537
20. Boultif A., and Louer D. J. Appl. Crystallogr. 24 (1991) 987
21. ICDD-PDF: 41-1103.
22. Lan Y.C., Chen X.L., Xu Y.P., Cao Y.G., and Huang F. Mater. Res. Bull. 35 (2000) 2325
23. Lan Y.C., Chen X.L., Cao Y.G., Xu Y.P., Xu T., Li J.Y., Jiang P.Z., Tao Z., and Liang J.K. J. Mater. Sci. Lett. 19 (2000) 2215
24. Chen X.L., Li J.Y., Cao Y.G., Lan Y.C., Li H., He M., Wang C.Y., Zhang Z., and Qiao Z.Y. Adv. Mater. 12 (2000) 1432
25. Lide D.R. CRC Handbook of Chemistry and Physics. 73rd ed. (1992), CRC Press Inc., Boca Raton
26. Davydov A.V., and Anderson T.J. In: Moustakas T.D., Mohney S.E., and Pearton S.J. (Eds). III-V Nitride Materials and Processes vol. III (1998), ECS, Boston, MA 38-49
27. Ho H.P., Lo K.C., Fu K.Y., Chu P.K., Li K.F., and Cheah K.W. Chem. Phys. Lett. 382 (2003) 573
28. Givargizov E.E. J. Crystal Growth 31 (1975) 20
29. Wagner R.S., and Ellis W.C. Appl. Phys. Lett. 4 (1964) 89
30. Buckley H.E. Crystal Growth (1951), Wiley, New York
31. Hsu Y.J., and Lu S.Y. J. Phys. Chem. B 109 (2005) 4398