Morphology of GaN in ammonia

Journal of Materials Science Letters

Volumn 19, Issue 24, 2000, Pages 2215-2217

  Lan, Yucheng ^a   Chen, Xiaolong ^a   Cao, Yongge ^a   Xu, Yanping ^a   Xu, Tao ^a   Li, Jianye ^a   Tao, Zheng ^a   Liang, Jingkui ^a,b  

^a INSTITUTE OF PHYSICS   (China)

^b INTERNATIONAL CENTRE FOR MATERIALS PHYSICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

AMMONIA; CONCENTRATION (PROCESS); MORPHOLOGY; NITRIDES; OPTICAL MICROSCOPY; SCANNING ELECTRON MICROSCOPY;

GALLIUM NITRIDE;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0034429978     PISSN: 02618028     EISSN: None     Source Type: Journal    
DOI: 10.1023/A:1006756303640     Document Type: Article

References (8)

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