Quasianalytical model for LT-GaAs and LT-Al0.3Ga0.7As MISFET devices

Microwave and Optical Technology Letters

Volumn 27, Issue 1, 2000, Pages 61-66

  Rao, Rapeta V V V J ^a   Chong, T C ^a   Tan, L S ^a   Lau, W S ^b   Liou, J J ^c  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b CHARTERED SEMICONDUCTOR MANUFACTURING LTD   (Singapore)

^c UNIVERSITY OF CENTRAL FLORIDA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GATES (TRANSISTOR); LOW TEMPERATURE EFFECTS; MOLECULAR BEAM EPITAXY; POISSON DISTRIBUTION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR GROWTH;

RADIO FREQUENCY POWER;

MISFET DEVICES;

EID: 0034299713     PISSN: 08952477     EISSN: None     Source Type: Journal    
DOI: 10.1002/1098-2760(20001005)27:1<61::AID-MOP18>3.0.CO;2-U     Document Type: Article

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