Change in band configuration of In0.57 Ga0.43 As1 - x Sbx / AlAs0.48 Sb0.52 quantum wells from type-II to type-I by increasing Sb composition x

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 32, Issue 1-2 SPEC. ISS., 2006, Pages 230-233

  Gozu, Shin ichiro ^a   Akahane, Kouichi ^a   Yamamoto, Naokatsu ^a   Ueta, Akio ^a   Ohtani, Naoki ^b  

^a NATIONAL INSTITUTE OF INFORMATION AND COMMUNICATIONS TECHNOLOGY   (Japan)

^b DOSHISHA UNIVERSITY   (Japan)

Author keywords

AlAsSb; InGaAsSb; Quantum well; Sb related III V semiconductors

Indexed keywords

ANTIMONY; BAND STRUCTURE; MODULATORS; PHOTOLUMINESCENCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS;

ALASSB; ANTIMONIDE COMPOSITION; INGAASSB; SB RELATED III-V SEMICONDUCTORS;

SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

EID: 33646173022     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2005.12.043     Document Type: Article

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