Defect formation in CdTe during laser-induced doping and application to the manufacturing nuclear radiation detectors

Physica Status Solidi C: Conferences

Volumn 3, Issue 4, 2006, Pages 1221-1224

  Gnatyuk, V A ^a,c   Aoki, T ^a   Hatanaka, Y ^b   Vlasenko, O I ^c  

^a SHIZUOKA UNIVERSITY   (Japan)

^b AICHI UNIVERSITY OF TECHNOLOGY   (Japan)

^c INSTITUTE OF SEMICONDUCTOR PHYSICS   (Ukraine)

Author keywords

[No Author keywords available]

Indexed keywords

DIODES; DOPING (ADDITIVES); FABRICATION; LASERS; DEFECTS; ELECTRIC PROPERTIES; NUCLEAR RADIATION SPECTROSCOPY;

CDTE; ELECTRICAL PROPERTIES; LASER-INDUCED DOPING; NUCLEAR RADIATION IMAGING DEVICES;

CADMIUM COMPOUNDS; CADMIUM TELLURIDE;

29.40.WK; 61.72.VV; 61.80.BA; 72.80.EY; 73.40.LQ; 78.55.ET;

EID: 33646172968     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200564726     Document Type: Conference Paper

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