Mechanisms of laser-induced defect formation and in doping in CdTe crystals

IEEE Transactions on Nuclear Science

Volumn 51, Issue 5 I, 2004, Pages 2466-2471

  Gnatyuk, V A ^a,b   Aoki, T ^a   Hatanaka, Y ^c  

^a SHIZUOKA UNIVERSITY   (Japan)

^b INSTITUTE OF HYDROBIOLOGY   (Ukraine)

^c AICHI UNIVERSITY OF TECHNOLOGY   (Japan)

Author keywords

Doping; Laser annealing; P n junctions; Radiation detectors; Semiconductor defects

Indexed keywords

ATOMIC FORCE MICROSCOPY; CADMIUM COMPOUNDS; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; DOPING (ADDITIVES); RADIATION DETECTORS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION;

LASER ANNEALING; P-N JUNCTIONS; TIME RESOLVED REFLECTIVITY (TRR);

LASER DAMAGE;

EID: 8444226435     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2004.836068     Document Type: Article

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