X-ray irradiation effects in top contact, pentacene based field effect transistors for space related applications

Applied Physics Letters

Volumn 88, Issue 15, 2006, Pages

  Devine, R A B ^a   Ling, Mang Mang ^b   Mallik, Abhijit Basu ^b   Roberts, Mark ^b   Bao, Zhenan ^b  

^a AIR FORCE RESEARCH LABORATORY   (United States)

^b Stanford University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY VARIATIONS; INTERFACE-STATE-LIKE DEFECTS; PENTACENE; X-RAY IRRADIATION EFFECTS;

DEFECTS; DIELECTRIC MATERIALS; ELECTRIC FIELDS; ELECTRIC POTENTIAL; FIELD EFFECT TRANSISTORS; INTERFACES (MATERIALS); X RAYS;

OLEFINS;

EID: 33646154644     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2194894     Document Type: Article

References (12)

1. L. F. Drummy, Y. J. Yang, and D. C. Martin, Ultramicroscopy 99, 247 (2004).
2. R. A. Street, A. Salleo, and M. L. Chabinyc, Phys. Rev. B 68, 085316 (2003).
3. D. V. Lang, X. Chi, T. Siegrist, A. M. Sergent, and A. P. Ramirez, Phys. Rev. Lett. 93, 076601 (2004).
4. J. E. Northrup and M. L. Chabinyc, Phys. Rev. B 68, 041202 (2003).
5. S. M. Sze, Physics of Semiconductor Devices (Wiley, New York, 1981), Chap..
6. P. V. Necliudov, M. S. Shur, D. J. Grundlach, and T. N. Jackson, J. Appl. Phys. 88, 6594 (2000).
7. P. Stallinga, H. L. Gomes, F. Biscarini, M. Murgia, and D. M. de Leeuw, J. Appl. Phys. 96, 5277 (2004).
8. D. Knipp, R. A. Street, A. Völkel, and J. Ho, J. Appl. Phys. 93, 347 (2003).
9. P. J. McWhorter and P. S. Winokur, Appl. Phys. Lett. 48, 133 (1986).
10. R. A. B. Devine, J.-L. Autran, W. L. Warren, and K. L. Vanheusden, Appl. Phys. Lett. 70, 2999 (1997).
11. S. C. Sun and J. D. Plummer, IEEE Trans. Electron Devices ED-27, 1497 (1980).
12. P. Paillet, D. Hervá, J.-L. Leray, and R. A. B. Devine, Appl. Phys. Lett. 63, 2088 (1993).