Growth of carbon nanotubes at low powers by impedance-matched microwave plasma enhanced chemical vapor deposition method

Journal of Nanoscience and Nanotechnology

Volumn 5, Issue 11, 2005, Pages 1887-1892

  Chen, S Y ^a   Chang, L W ^a   Peng, C W ^a   Miao, H Y ^a   Lue, Juh Tzeng ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

Field emission; Helix carbon nanotubes; Impedance matching; Low power MPECVD; Single nanowire

Indexed keywords

ELECTRON FIELD EMISSIONS; HELIX CARBON NANOTUBES; MICROWAVE POWER; MOLECULAR DISSOCIATION; SINGLE NANOWIRE;

BINDING ENERGY; CARBON DIOXIDE; CRYSTAL GROWTH; ELECTRODES; IMPEDANCE MATCHING (ELECTRIC); MICROWAVES; NICKEL; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; THERMAL CONDUCTIVITY;

CARBON NANOTUBES;

CARBON DIOXIDE; CARBON NANOTUBE; HYDROGEN; METHANE; NANOMATERIAL; NANOTUBE; NICKEL;

ARTICLE; CHEMICAL MODEL; CHEMISTRY; CRYSTALLIZATION; ELECTRIC CONDUCTIVITY; ELECTROCHEMISTRY; ELECTRODE; GAS; HEAT; IMPEDANCE; MATERIALS TESTING; METHODOLOGY; MICROWAVE RADIATION; NANOTECHNOLOGY; SCANNING ELECTRON MICROSCOPY; TEMPERATURE;

CARBON DIOXIDE; CRYSTALLIZATION; ELECTRIC CONDUCTIVITY; ELECTRIC IMPEDANCE; ELECTROCHEMISTRY; ELECTRODES; GASES; HEAT; HYDROGEN; MATERIALS TESTING; METHANE; MICROSCOPY, ELECTRON, SCANNING; MICROWAVES; MODELS, CHEMICAL; NANOSTRUCTURES; NANOTECHNOLOGY; NANOTUBES; NANOTUBES, CARBON; NICKEL; TEMPERATURE;

EID: 33646137144     PISSN: 15334880     EISSN: None     Source Type: Journal    
DOI: 10.1166/jnn.2005.437     Document Type: Article

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