δ-Doped MOS Ge/Si quantum dot/well infrared photodetector

Thin Solid Films

Volumn 508, Issue 1-2, 2006, Pages 389-392

  Lin, C H ^a   Yu, C Y ^a   Kuo, P S ^a   Chang, C C ^a   Guo, T H ^a   Liu, C W ^a,b  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^b INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

Author keywords

Germanium; MOS; Silicon

Indexed keywords

DIODES; ELECTRIC POTENTIAL; INFRARED DETECTORS; INFRARED RADIATION; MOS DEVICES; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WELLS;

MOS; QUANTUM DOT INFRARED PHOTODETECTORS (QDIPS); QUANTUM WELL INFRARED DETECTORS (QWIPS); TRANSITION ENERGY;

PHOTODETECTORS;

EID: 33646117999     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2005.06.109     Document Type: Article

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