High efficient 820 nm MOS Ge quantum dot photodetectors for short-reach integrated optical receivers with 1300 and 1550 nm sensitivity

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 2002, Pages 91-94

  Hsu, B C ^a   Chang, S T ^a   Shie, C R ^a   Lai, C C ^a   Chen, P S ^b   Liu, C W ^a,b  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^b INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; INTEGRATED OPTICS; MOS DEVICES; OPTICAL COMMUNICATION; PHOTODETECTORS; SIGNAL RECEIVERS;

INTEGRATED OPTICAL RECEIVERS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0036923551     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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