Improvement of oxidation-induced Ge condensation method by H+ implantation and two-step annealing for highly stress-relaxed SiGe-on-insulator

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 44, Issue 4 B, 2005, Pages 2357-2360

  Sadoh, Taizoh ^a   Matsuura, Ryo ^a   Ninomiya, Masaharu ^b   Nakamae, Masahiko ^c   Enokida, Toyotsugu ^d   Hagino, Hiroyasu ^d   Miyao, Masanobu ^a  

^a KYUSHU UNIVERSITY   (Japan)

^b SUMCO CORPORATION   (Japan)

^c SUMCO Corporation   (Japan)

^d Fukuryo Semicon Engineering Corporation   (Japan)

Author keywords

H+ implantation; MOSFET; Oxidation induced Ge condensation; SGOI; Strained Si

Indexed keywords

ANNEALING; CONDENSATION; GERMANIUM; HYDROGEN; ION IMPLANTATION; MOSFET DEVICES; OXIDATION; STRESS RELAXATION; THICKNESS MEASUREMENT;

H+ IMPLANTATION; OXIDATION-INDUCED GE CONDENSATION; SGOI; STRAINED SI;

SILICON ON INSULATOR TECHNOLOGY;

EID: 21244502933     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.44.2357     Document Type: Conference Paper

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