Pd/Pt/Au ohmic contact for AlSb/InAs0.7Sb0.3 heterostructures

Solid-State Electronics

Volumn 50, Issue 3, 2006, Pages 429-432

  Robinson, J A ^a   Mohney, S E ^a   Boos, J B ^b   Tinkham, B P ^b   Bennett, B R ^b  

^a PENNSYLVANIA STATE UNIVERSITY   (United States)

^b NAVAL RESEARCH LABORATORY   (United States)

Author keywords

InAs0.7Sb0.3; Ohmic contacts

Indexed keywords

HETEROJUNCTIONS; MORPHOLOGY; OPTIMIZATION; PALLADIUM COMPOUNDS; RAPID THERMAL ANNEALING;

BUFFER LAYER; INAS0.7SB0.3; NON-UNIFORMLY;

OHMIC CONTACTS;

EID: 33646096975     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2006.01.009     Document Type: Article

References (12)

1. Bennett B.R., Magno R., Boos J.B., Kruppa W., and Ancona M.G. Antimonide-based compound semiconductors for electronic devices: A review. Solid-State Electron 49 (2005) 1875-1895
2. Boos J.B., Bennett B.R., Kruppa W., Park D., Mittereder J., Bass R., et al. Ohmic contacts in AlSb/InAs high electron mobility transistors for low voltage operation. J Vac Sci Technol B 17 3 (1999) 1022-1027
3. Boos J.B., Yang M.J., Bennett B.R., Park D., Kruppa W., and Bass R. Low-voltage, high-speed AlSb-InAsSb HEMTs. Electron Lett 35 10 (1999) 847-848
4. 0.3 HEMTs for low-voltage high-frequency applications, In: Proc international semiconductor device research symp conf, 2003, Washington, DC. p. 352.
5. Tinkham B.P., Bennett B.R., Magno R., Shanabrook B.V., and Boos J.B. Growth of InAsSb-channel high electron mobility transistor structures. J Vac Sci Technol B 23 (2005) 1441-1444
6. Schroder D.K. Semiconductor material and device characterization (1998), Wiley-Interscience, New York
7. Taylor R.P., Coleridge P.T., Davies M., Feng Y., McCaffrey J.P., and Marshall P.A. Physical and electrical investigation of ohmic contacts to AlGaAs/GaAs heterostructures. J Appl Phys 76 12 (1994) 7966-7972
8. Taylor R.P., Newbury R., Sachradjda A.S., Feng Y., Coleridge P.T., Davies M., et al. Investigation of the current injection properties of ohmic spikes in nanostructures. Superlattices Microstruct 24 5 (1998) 337-345
9. Liu WE, Mohney SE, unpublished result.
10. Luef C., Flandorfer H., Richter K.W., and Ipser H. Palladium as a contact material for InSb semiconductors-The In-Pd-Sb phase diagram. J Electron Mater 32 2 (2003) 43-51
11. Liu W.E., and Mohney S.E. Condensed phase equilibria in transition metal-In-Sb systems and predictions for thermally stable contacts to InSb. Mater Sci Eng B 103 2 (2003) 189-201
12. El-Boragy M., and Schubert K. Z Metallkd 61 (1970) 579