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Volumn 3, Issue , 2003, Pages 1810-1817

A New Monolithic Emitter-Switching Bipolar Transistor (ESBT) in High-Voltage Converter Applications

Author keywords

Emitter Switching Bipolar Transistor; Forward converter; Monolithic cascode structure

Indexed keywords

ELECTRIC CONVERTERS; ELECTRIC POTENTIAL; FREQUENCIES; MOSFET DEVICES; POWER SUPPLY CIRCUITS;

EID: 0242424392     PISSN: 01972618     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper
Times cited : (19)

References (6)
  • 2
    • 0029406648 scopus 로고
    • On the use of IGBT-gated GTO-cascode switches in quasi-resonant converters
    • November/December
    • T. Chan, M. M. Morcos, "On the use of IGBT-gated GTO-cascode switches in quasi-resonant converters," IEEE Transactions on Industry Applications, Vol. 31, No. 6, November/December 1995, pp. 1227-1233.
    • (1995) IEEE Transactions on Industry Applications , vol.31 , Issue.6 , pp. 1227-1233
    • Chan, T.1    Morcos, M.M.2
  • 4
    • 0242450703 scopus 로고    scopus 로고
    • VIPower™ M3: A New Smart Technology for High Power, High Speed Applications
    • 10-12 June, Nuremberg, Germany
    • S. Sueri, "VIPower™ M3: a New Smart Technology for High Power, High Speed Applications." Proceedings of the PCIM'97 Europe, 10-12 June 1997, Nuremberg, Germany, pp. 19-27.
    • (1997) Proceedings of the PCIM'97 Europe , pp. 19-27
    • Sueri, S.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.