OCVD carrier lifetime measurements on an inhomogeneous diode structure

2002 23rd International Conference on Microelectronics, MIEL 2002 - Proceedings

Volumn 1, Issue , 2002, Pages 393-395

  Benda, V ^a   Novak Z ^a  

^a CZECH TECHNICAL UNIVERSITY IN PRAGUE   (Czech Republic)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER LIFETIME MEASUREMENTS; DIODE STRUCTURE; LIFE-TIME DISTRIBUTION; LUMPED-CHARGE; NON-UNIFORM; OCVD METHOD; SIMPLE MODELING;

MICROELECTRONICS;

EID: 33646031418     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/MIEL.2002.1003220     Document Type: Conference Paper

References (5)

1. S. R. Lederhandler and L. J. Giacoletto, "Measurement of minority carrier lifetime and surface effects in junction devices", Proceedings of the IRE, vol. 43, 1955, pp. 477-483.
2. V. Benda and J.Kozisek, "In-Process Monitoring of Carrier Lifetime Distribution in Technology of Large-Area Power Semiconductor Devices", in Proceedings of the 8th International Power Electronics & Motion Control Conference PEMC'98, Prague, 1998, vol.1. , 1998, pp. I-26-I-30.
3. M. Skaloud, A. Franek, "Contribution to OCVD method of determining the Carrier Lifetime", in Proceedings of the 17th Yugoslav Conference on Microelectronics MIEL'89, Nis, 1989, vol. 1, 1989, pp. 290-294.
4. V. Benda, "Using Carrier Lifetime Dependencies on Temperature and Current Density in Diagnostics of Silicon Structures, in Symposium on Materials and Devices for Power Electronics-MADEP, Florence, 1991, 1991, pp. 0/065-0/068
5. V. Benda, M. Cernik and Z. Novak, "A Note on Trap Recombination in Power Semiconductor Devices", in Proceeding of the 4th International Seminar on Power Semiconductors ISPS'98, Prague 1998, 1998, pp. 59-64.