Numerical simulation of LEC growth of InP crystal with an axial magnetic field

International Journal of Heat and Mass Transfer

Volumn 49, Issue 9-10, 2006, Pages 1738-1746

  Li, Mingwei ^a   Liu, Chunmei ^b   Wang, Pingqing ^a  

^a CHONGQING UNIVERSITY   (China)

^b HENAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

Author keywords

Fluid flow; Heat transfer; InP; LEC; Magnetic field; Thermal stress

Indexed keywords

FINITE ELEMENT METHOD; FLOW OF FLUIDS; HEAT TRANSFER; INDIUM COMPOUNDS; MAGNETIC FIELD EFFECTS; MAGNETIC FIELDS; NAVIER STOKES EQUATIONS; NUMERICAL ANALYSIS; SINGLE CRYSTALS; THERMAL STRESS;

ENCAPSULANT CZOCHRALSKI GROWTH; INDIUM PHOSPHATE (INP); LEC; STREAM FUNCTION EQUATIONS; THERMAL STRESS DISTRIBUTIONS;

CRYSTAL GROWTH;

CRYSTAL GROWTH; FINITE ELEMENT METHOD; FLOW OF FLUIDS; HEAT TRANSFER; INDIUM COMPOUNDS; MAGNETIC FIELD EFFECTS; MAGNETIC FIELDS; NAVIER STOKES EQUATIONS; NUMERICAL ANALYSIS; SINGLE CRYSTALS; THERMAL STRESS;

EID: 33645887527     PISSN: 00179310     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ijheatmasstransfer.2005.09.033     Document Type: Article

References (14)

1. Walker J.S., Henry D., and BenHadid H. Magnetic stabilization of the buoyant convection in the liquid encapsulated Czochralski process. J. Cryst. Growth 243 (2002) 108-116
2. Morton J.L., Ma N., Bliss D.F., and Bryant G.G. Dopant segregation during liquid encapsulated Czochralski crystal growth in a steady axial magnetic field. J. Cryst. Growth 242 (2002) 471-485
3. Morton J.L., Ma N., Bliss D.F., and Bryant G.G. Magnetic field effects during liquid encapsulated Czochralski growth of doped photonic semiconductor crystals. J. Cryst. Growth 250 (2003) 174-182
4. Zhang H., Prasad V., and Bliss D.F. Modeling of high pressure, liquid-encapsulated Czochraski growth of InP crystal. J. Cryst. Growth 169 (1996) 250-260
5. Zou Y.F., Wang G.-X., Zhang H., Prasad V., and Bliss D.F. Macro-segregation, dynamics of interface and stresses in high pressure LEC grown crystal. J. Cryst. Growth 180 (1997) 524-533
6. Bystrova E.N., Kalaev V.V., Smirnova O.V., Yakovlev E.V., and Makarov Yu.N. Prediction of the melt/crystal interface shape geometry in liquid encapsulated Czochralski growth of InP bulk crystals. J. Cryst. Growth 250 (2003) 189-194
7. Lan C.W., and Ting C.C. Numerical investigation on the batch characteristics of liquid encapsulated vertical Bridgman crystal growth. J. Cryst. Growth 149 (1995) 175-186
8. Okano Y., Kondo H., and Dost S. Numerical study of interface shape control in the VGF growth of compound semiconductor crystal. J. Cryst. Growth 237-239 (2002) 1769-1772
9. Givoli D., Flaherty J.E., and Shephard M.S. Analysis of InP LEC melt flows using a parallel adaptive finite element scheme. J. Cryst. Growth 180 (1997) 510-516
10. Dupret F., Nicodeme P., Ryckmans Y., Wouters P., and Crochet M.J. Global modeling of heat transfer in crystal growth furnaces. Int. J. Heat Mass Transfer 33 9 (1990) 1849-1871
11. Li M.W., Li Y.R., Imaishi N., and Tsukada T. Global simulation of a silicon Czochralski furnace. J. Cryst. Growth 234 (2002) 32-46
12. Li M.W., Hu W.R., Chen N.H., Zeng D.L., and Tang Z.M. Numerical analysis of LEC growth of GaAs with an axial magnetic field. Int. J. Heat Mass Transfer 45 (2002) 2843-2851
13. U. Sahr, G. Müller, Growth of InP substrate crystals by the vertical gradient freeze technique, in: Conference Proceedings of 12th Semiconducting and Insulating Materials Conference, 2002, pp.13-18.
14. Kohir K., Ohta M., and Oda O. Growth of long-length 3 inch diameter Fe-doped InP single crystals. J. Cryst. Growth 158 (1996) 197-204