Modeling of high pressure, liquid-encapsulated Czochralski growth of InP crystals

Journal of Crystal Growth

Volumn 169, Issue 2, 1996, Pages 250-260

  Zhang, H ^a   Prasad, V ^a   Bliss, D F ^b  

^a Stony Brook University   (United States)

^b NONE

Author keywords

[No Author keywords available]

Indexed keywords

BUOYANCY; COMPUTER SIMULATION; CRYSTAL GROWTH FROM MELT; DISLOCATIONS (CRYSTALS); HEAT LOSSES; HIGH PRESSURE EFFECTS IN SOLIDS; MATHEMATICAL MODELS; NUMERICAL METHODS; PHASE INTERFACES; TEMPERATURE DISTRIBUTION; THERMAL EFFECTS; TRANSPORT PROPERTIES;

CURVILINEAR FINITE VOLUME DISCRETIZATION METHOD; LIQUID ENCAPSULATED CZOCHRALSKI (LEC) METHOD; MULTIZONE ADAPTIVE GRID GENERATION METHOD;

SEMICONDUCTING INDIUM PHOSPHIDE;

EID: 0030566296     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(96)00306-5     Document Type: Article

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