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Journal of Crystal Growth

Volumn 242, Issue 3-4, 2002, Pages 471-485

Dopant segregation during liquid-encapsulated Czochralski crystal growth in a steady axial magnetic field

(4) Morton, Joseph L a Ma, Nancy b Bliss, David F c Bryant, George G c

a University of Missouri Rolla (United States)

b North Carolina State University (United States)

c AIR FORCE RESEARCH LABORATORY (United States)

Author keywords

A1. Magnetic fields; A1. Mass transfer; A1. Segregation; A2. Growth from melt; A2. Liquid encapsulated Czochralski method; A2. Magnetic field assisted Czochralski method; B2. Semiconducting III V compounds

Indexed keywords

ELECTRIC CONDUCTANCE; MAGNETIC FIELDS; MOLTEN MATERIALS; SEGREGATION (METALLOGRAPHY); SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SOLIDIFICATION;

DOPANT SEGREGATION; STEADY AXIAL MAGNETIC FIELDS;

CRYSTAL GROWTH FROM MELT;

EID: 0036645494 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(02)01425-2 Document Type: Article

Times cited : (28)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.