Ion-beam lithography by use of highly charged Ar-ion beam

Review of Scientific Instruments

Volumn 77, Issue 3, 2006, Pages

  Momota, Sadao ^a   Iwamitsu, Shingo ^a   Goto, Shougo ^a   Nojiri, Yoichi ^a   Taniguchi, Jun ^b   Miyamoto, Iwao ^b   Ohno, Hirohisa ^b   Morita, Noboru ^c   Kawasegi, Noritaka ^c  

^a KOCHI UNIVERSITY OF TECHNOLOGY   (Japan)

^b TOKYO UNIVERSITY OF SCIENCE   (Japan)

^c UNIVERSITY OF TOYAMA   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ARGON; ELECTRIC CHARGE; ELECTRON CYCLOTRON RESONANCE; ETCHING; FABRICATION; GLASS; ION SOURCES; IRRADIATION; LITHOGRAPHY; SILICON;

HIGHLY CHARGED AR-ION BEAM; HIGHLY CHARGED IONS (HCIS); ION-BEAM LITHOGRAPHY (IBL); SPIN ON GLASS (SOG);

ION BEAMS;

EID: 33645814208     PISSN: 00346748     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2165269     Document Type: Conference Paper

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