Results of 3" and 4" low-gradient s.i. GaAs growth under controlled vapor pressure

Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997

Volumn , Issue , 1997, Pages 53-56

  Neubert, M ^a   Rudolph, P ^a   Seifert, M ^a  

^a Institut fur Kristallziichtung (IKZ)   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM ARSENIDE; SEMICONDUCTING GALLIUM; TEMPERATURE;

DISLOCATION DENSITIES; ELECTRICAL PARAMETER; LOW TEMPERATURE GRADIENTS; STRUCTURAL QUALITIES; THERMALLY INDUCED STRESS;

III-V SEMICONDUCTORS;

EID: 33645721724     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISCS.1998.711545     Document Type: Conference Paper

References (6)

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2. Tatsumi M Kawase T Iguchi Y Fujita K Yamada M 1994 Proc. 8th Conf. on Semi-insulating III-V Materials, Warsaw, Poland 11-18
3. Neubert M Seifert M Rudolph P Trompa K Pietsch M 1996 Proa 9th Conf. Semicond., Insulat. Mater. (SIMC'9), Toulouse, France (IEEE publishing) 17-20
4. Donecker J Rautenstrauch S Bergmann S 1997 to be presented at DRIP VII Templin, Germany Proceedings: IOP
5. Hashio K Sawada S Tatsumi M Fujita K Akai S 1997 J. Crystal Growth 173 33-41
6. Alexander H Haasen P 196 8 Solid state physics (New York: Academic) 27-158