First results of s.i. GaAs single crystal growth applying the Vapour Pressure Controlled Czochralski Method

IEEE Semiconducting and Semi-Insulating Materials Conference, SIMC

Volumn , Issue , 1996, Pages 17-20

  Neubert, M ^a   Seifert, M ^a   Rudolph, P ^a   Trompa, K ^a   Pietsch, M ^a  

^a LEIBNIZ INSTITUTE FOR CRYSTAL GROWTH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH FROM MELT; CRYSTAL STRUCTURE; ELECTRIC PROPERTIES; PHASE DIAGRAMS; SEMICONDUCTOR GROWTH; SINGLE CRYSTALS;

ETCH PIT DENSITY (EPD); VAPOR PRESSURE CONTROLLED CZOCHRALSKI METHOD (VCZ);

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0030387583     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)