A low-voltage and variable-gain distributed amplifier for 3.1-10.6 GHz UWB systems

IEEE Microwave and Wireless Components Letters

Volumn 16, Issue 4, 2006, Pages 179-181

  Shin, Shih Chieh ^a,b   Lin, Chin Shen ^a,b   Tsai, Ming Da ^a,b   Lin, Kun You ^a,b,c   Wang, Huei ^a,b  

^a IEEE   (Taiwan)

^b NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^c SUNPLUS TECHNOLOGY CO LTD   (Taiwan)

Author keywords

Low noise amplifier (LNA); Low voltage; Microwave monolithic integrated circuit (MMIC); Radio frequency integrated circuit (RFIC); SiGe BiCMOS; Ultra wideband (UWB); Variable gain

Indexed keywords

LOW NOISE AMPLIFIER (LNA); LOW VOLTAGE; MICROWAVE MONOLITHIC INTEGRATED CIRCUIT (MMIC); RADIO FREQUENCY INTEGRATED CIRCUIT (RFIC); SIGE BICMOS; ULTRA-WIDEBAND (UWB); VARIABLE GAIN;

BROADBAND AMPLIFIERS; FIELD EFFECT TRANSISTORS; GAIN CONTROL; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; POWER CONTROL; ULTRAVIOLET INSTRUMENTS; VOLTAGE MEASUREMENT;

MICROWAVE AMPLIFIERS;

EID: 33645691409     PISSN: 15311309     EISSN: None     Source Type: Journal    
DOI: 10.1109/LMWC.2006.872134     Document Type: Article

References (12)

1. A. Bevilacqua and A. M. Niknejad, "An ultra-wideband CMOS LNA for 3.1 to 10.6 GHz wireless receiver," in Int. Solid-State Circuits Conf. Tech. Dig., Feb. 2004, pp. 382-383.
2. A. Ismail and A. Abidi, "A 3 to 10 GHz LNA using a wideband LC-ladder matching network," in Int. Solid-State Circuits Conf. Tech. Dig, Feb. 2004, pp. 384-385.
3. D. Barras, F. Ellinger, H. Jackel, and W. Hirt, "A low supply voltage SiGe LNA for ultra-wideband frontends," IEEE Microw. Wireless Compon. Lett., vol. 14, no. 10, pp. 469-471, Oct. 2004.
4. J. Lee and J. D. Cressler, "A 3-10 GHz SiGe resistive feedback low noise amplifier for UWB applications," in IEEE RFIC Symp. Dig., Jun. 2005, pp. 545-548.
5. F. Ellinger, D. Barras, M. Schmatz, and H. Jackel, "A low power DC-7.8 GHz BiCMOS LNA for UWB and optical communication," in IEEE MTT-S Int. Microw. Symp. Dig., Jun. 2004, vol. 1, pp. 13-16.
6. N. Shiramizu, T. Masuda, M. Tanabe, and K. Washio, "A 3-10 GHz bandwidth low-noise amplifier for full-band UWB communications in 0.25-μm SiGe BiCMOS technology," in IEEE RFIC Symp. Dig., Jun. 2005, pp. 39-42.
7. R. C. Liu, C. S. Lin, K. L. Deng, and H. Wang, "A 0.5-14-GHz 10.6-dB CMOS cascode distributed amplifier," in IEEE Symp. VLSI Circuits Tech. Dig., 2003, pp. 139-140.
8. K. H. Chen and C. K. Wang, "A 3.1-10.6 GHz CMOS cascaded two-stage distributed amplifier for ultra-wideband application," in Proc. IEEE Asia-Pacific Conf. Adv. Syst. Integr. Circuits (AP-ASIC), Aug. 2004, pp. 296-299.
9. M. D. Tsai, K. Y. Lin, and H. Wang, "A 5.4 mW LNA using 0.35-μm SiGe BiCMOS technology for 3.1-10.6 GHz UWB wireless receivers," in IEEE RFIC Symp. Dig., Long Beach, CA, Jun. 2005.
10. F. Zhang and P. Kinget, "Low power programmable-gain CMOS distributed LNA for ultra-wideband applications," in IEEE Symp. VLSI Circuits Tech. Dig., 2005, pp. 78-81.
11. Y. Aoki, M. Fujii, S. Ohkubo, S. Yoshida, T. Niwa, Y. Miyoshi, H. Dodo, and H. Hida, "A 1.4-dB-NF variable gain LNA with continuous control for 2-GHz band mobile phones using InGaP emitter HBTs," in IEEE RFIC Symp. Dig., 2001, pp. 231-234.
12. J. H. Jeong and Y. W. Kwon, "Monolithic distributed amplifier with active control schemes for optimum gain and group-delay flatness, band-width, and stability," IEEE Trans. Microw. Theory Tech., vol. 52, no. 4, pp. 1101-1110, Apr. 2004.