A 1.4-dB-NF variable-Gain LNA with continuous control for 2-GHz-band mobile phones using InGaP emitter HBTs

IEEE Radio Frequency Integrated Circuits Symposium, RFIC, Digest of Technical Papers

Volumn , Issue , 2001, Pages 231-234

  Aoki, Y ^a   Fujii, M ^a   Ohkubo, S ^a   Yoshida, S ^a   Niwa, T ^a   Miyoshi, Y ^a   Dodo, H ^a   Goto, N ^a   Hida, H ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CELLULAR TELEPHONE SYSTEMS; GAIN CONTROL; GAIN MEASUREMENT; HETEROJUNCTION BIPOLAR TRANSISTORS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE;

INDIUM GALLIUM PHOSPHIDE; MOBILE PHONES; VARIABLE-GAIN LOW-NOISE-AMPLIFIER;

AMPLIFIERS (ELECTRONIC);

EID: 0034878186     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)

1. A novel baseband-1.5 GHz monolithic HBT variable gain amplifier with PIN diode gain control
2. Microwave low noise GaAs HBTs
3. InGaP/GaAs HBTs for portable wireless applications