Characteristics of single metallic nanowire growth via a field-emission induced process

Journal of Applied Physics

Volumn 99, Issue 6, 2006, Pages

  Oon, C H ^a,b   Khong, S H ^a   Boothroyd, C B ^c   Thong, J T L ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b SINGAPORE MIT ALLIANCE   (Singapore)

^c INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION; EPITAXIAL GROWTH; MORPHOLOGY; NANOSTRUCTURED MATERIALS; ORGANOMETALLICS; TRANSMISSION ELECTRON MICROSCOPY;

CARBONACEOUS OVERCOAT; FIELD-EMISSION INDUCED PROCESS; PRECURSOR DISSOCIATION; SINGLE METALLIC NANOWIRE GROWTH;

SEMICONDUCTOR QUANTUM WIRES;

EID: 33645665676     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2181281     Document Type: Article

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