A 2.17-dB NF 5-GHz-band monolithic CMOS LNA with 10-mW DC power consumption

IEEE Transactions on Microwave Theory and Techniques

Volumn 53, Issue 3 I, 2005, Pages 813-823

  Chiu, Hung Wei ^a,b   Lu, Shey Shi ^a   Lin, Yo Sheng ^c  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^b TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

^c NATIONAL CHI NAN UNIVERSITY   (Taiwan)

Author keywords

Low noise amplifier (LNA); MOSFET amplifier; Noise figure (NF); Thin substrate

Indexed keywords

BANDWIDTH; CMOS INTEGRATED CIRCUITS; ELECTRIC IMPEDANCE; ELECTRIC INDUCTORS; ELECTRIC POWER UTILIZATION; FIELD EFFECT TRANSISTORS; SEMICONDUCTING GALLIUM ARSENIDE; SPURIOUS SIGNAL NOISE;

LOW-NOISE AMPLIFIERS; MOSFET AMPLIFIERS; NOISE FIGURE; THIN SUBSTRATES;

AMPLIFIERS (ELECTRONIC);

EID: 15844399395     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMTT.2004.842510     Document Type: Article

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