Theoretical investigation of an InGaP/GaAs heterostructure-emitter bipolar transistor with a wide-gap collector

Semiconductor Science and Technology

Volumn 17, Issue 5, 2002, Pages 405-413

  Cheng, Shiou Ying ^a  

^a ORIENTAL INSTITUTE OF TECHNOLOGY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; COMPUTER SIMULATION; ELECTRIC BREAKDOWN OF SOLIDS; GAIN CONTROL; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DOPING;

BASE-COLLECTOR HETEROJUNCTIONS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0036567359     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/17/5/301     Document Type: Article

References (15)

1. Band lineup for a GaInP/GaAs heterojunction measured by a high-gain Npn heterojunction bipolar transistor grown by metal-organic chemical vapor deposition
2. Determination of valence and conduction-band discontinuities at the (Ga,In)P/GaAs heterojunction by C-V profiling
3. Interface properties for GaAs/InGaAlP heterojunctions by the capacitance-voltage profiling technique
4. 0.51P/GaAs tunneling emitter bipolar transistors grown by Gas-source molecular beam epitaxy
5. Influence of the δ-doping sheet and setback layer on the performance of an InGaP/GaAs heterojunction bipolar transistor
6. Heterojunction bipolar transistor using a (Ga,In)P emitter on a GaAs base, grown by molecular beam epitaxy
7. 0.85As pseudormorphic HEMT
8. A novel InGaP/GaAs S-shaped negative-differential-resistance switching for multiple-valued logic application
9. +-GaAs
10. A heterojunction bipolar transistor with separate carrier injection and confinement
11. 0.5P/GaAsA single- and double-heterojunction bipolar transistors with a carbon-doped base
12. InGaP/GaAs/InGaP Double heterostructure bipolar transistors with carbon-doped base grown by CBE
13. High current gain, low offset voltage heterostructure emitter bipolar transistors