Depth resolved scanning tunneling spectroscopy of shallow acceptors in gallium arsenide

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 45, Issue 3 B, 2006, Pages 2193-2196

  Loth, S ^a   Wenderoth, M ^a   Winking, L ^a   Ulbrich, R G ^a   Malzer, S ^b   Dohler G H ^b  

^a UNIVERSITY OF GÖTTINGEN   (Germany)

^b UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

Author keywords

Electronic structure; III V semiconductors; Scanning tunneling microscopy; Shallow dopants

Indexed keywords

ANISOTROPY; CARBON; CRYSTAL DEFECTS; ELECTRONIC STRUCTURE; HETEROJUNCTIONS; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTOR DOPING; SURFACE STRUCTURE; ZINC;

III-V SEMICONDUCTORS; SHALLOW DOPANTS; SHAPED PROTRUSION; SINGLE SHALLOW ACCEPTORS;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 33645541335     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.45.2193     Document Type: Article

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