Reactive ion etching induced damage evaluation for optoelectronic device fabrication

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 24, Issue 2, 2006, Pages 756-761

  Morello, G ^a   Quaglio, M ^a,b   Meneghini, G ^a   Papuzza, C ^b   Kompocholis, C ^c,d  

^a BROADCOM CORPORATION   (United States)

^b POLITECNICO DI TORINO   (Italy)

^c ITC IRST   (Italy)

^d AGILENT TECHNOLOGIES   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ETCHING; FABRY-PEROT INTERFEROMETERS; LASER DAMAGE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR LASERS;

FABRY-PEROT LASER DIODE DEVICES; OPTOELECTRONIC DEVICE FABRICATION; REACTIVE ION ETCHING (RIE);

OPTOELECTRONIC DEVICES;

EID: 33645533947     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2181576     Document Type: Article

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