Evaluation of induced damage by CH4/H2 reactive ion etching on InP:n++

Microelectronic Engineering

Volumn 67-68, Issue , 2003, Pages 356-362

  Morello, G ^a   Baron, C ^a   Re, D ^a   Sarocchi, D ^a   Meneghini, G ^a  

^a TTC Agilent Technologies   (Italy)

Author keywords

Induced damage evaluation; InP based devices; Optoelectronic; Reactive ion etching

Indexed keywords

DRY ETCHING; ELECTRIC CONDUCTANCE; HALL EFFECT; HYDROGEN; METHANE; OPTOELECTRONIC DEVICES; SEMICONDUCTING INDIUM PHOSPHIDE;

SURFACE DAMAGE;

REACTIVE ION ETCHING;

EID: 0038359104     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(03)00090-X     Document Type: Conference Paper

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