Electronic structures of individual poly(3-hexylthiophene) nanowires on hydrogen-terminated Si(100) surfaces

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 45, Issue 3 B, 2006, Pages 1956-1961

  Terada, Yasuhiko ^a   Shigekawa, Hidemi ^a   Suwa, Yuji ^b   Heike, Seiji ^b   Fujimori, Masaaki ^b   Hashizume, Tomihiro ^b  

^a UNIVERSITY OF TSUKUBA   (Japan)

^b HITACHI LTD   (Japan)

Author keywords

Conducting polymer; Electronic structures; First principles calculation; P3HT; Scanning tunneling microscopy spectroscopy (STM STS); Si(100)

Indexed keywords

CONDUCTIVE PLASTICS; CURRENT VOLTAGE CHARACTERISTICS; ELECTRONIC STRUCTURE; POLYMERS; SCANNING TUNNELING MICROSCOPY; SILICON;

CONDUCTING POLYMERS; FIRST-PRINCIPLES CALCULATION; P3HT; SCANNING TUNNELING MICROSCOPY/SPECTROSCOPY (STM/STS); SI(100);

NANOSTRUCTURED MATERIALS;

EID: 33645520389     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.45.1956     Document Type: Article

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