Field emission from H- and O-terminated heavily P-doped homoepitaxial diamond

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 24, Issue 2, 2006, Pages 967-970

  Yamada, Takatoshi ^a   Kato, Hiromitsu ^a   Shikata, Shin Ichi ^a   Nebel, Christoph E ^a   Yamaguchi, Hishato ^b   Kudo, Yuki ^b   Okano, Ken ^b  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b International Christian Univiversity ^*  (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CRYSTALLINE MATERIALS; FIELD EMISSION DISPLAYS; HYDROGEN; OXIDATION; OXYGEN; PHOSPHORUS; PLASMAS;

CHEMICAL OXIDIZATION; ELECTRON AFFINITIES; FOWLER-NORDHEIM PLOTS; HYDROGEN PLASMA TREATMENT;

DIAMONDS;

EID: 33645501538     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2180263     Document Type: Article

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