Characterization of highly-oriented ferroelectric PbxBa1-xTiO3 thin films grown by metalorganic chemical vapor deposition

Journal of Materials Research

Volumn 20, Issue 11, 2005, Pages 2969-2976

  El Naggar, Mohamed Y ^a   Boyd, David A ^a   Goodwin, David G ^a  

^a California Institute of Technology   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; BACKSCATTERING; CHARACTERIZATION; ELECTRON DIFFRACTION; FILM GROWTH; ION BEAM ASSISTED DEPOSITION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SINGLE CRYSTALS; STOICHIOMETRY; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

ELECTRON BACKSCATTER DIFFRACTION (EBSD); HIGH-TEMPERATURE X-RAY DIFFRACTION (HTXRD); SILICON SUBSTRATES; TEXTURED SUBSTRATES; THIN FILMS GROWTH;

FERROELECTRIC THIN FILMS;

EID: 33645455404     PISSN: 08842914     EISSN: None     Source Type: Journal    
DOI: 10.1557/JMR.2005.0374     Document Type: Article

References (41)

1. P. Krulevitch, A.P. Lee, P.B. Ramsey, J.C. Trevino, J. Hamilton, and M.A. Northrup: Thin film shape memory alloy microactuators. J. Microelectromech. Syst. 5(4), 270-282 (1996).
2. G. Shirane, S. Hoshino, and K. Suzuki: Crystal structures of lead titanate and of lead-barium titanate. J. Phys. Soc. Jpn. 5(6), 453-455 (1950).
3. K. Bhattacharya, A. DeSimone, K.F. Hane, R.D. James, and C.J. Palmstrom: Tents and tunnels on martensitic films. Mater. Sci. Eng. A, Struct. Mater. Properties Microstruct. Process. 275, 685-689 (1999).
4. K. Bhattacharya and R.D. James: A theory of thin films of martensitic materials with applications to microactuators. J. Mech. Phys. Solids, 47(3), 531-576 (1999).
5. 3 thin-films by metalorganic vapor-phase epitaxy under reduced pressure. J. Cryst. Growth 146(1-4), 624-629 (1995).
6. 3 films grown on p-InP (100) substrates at low temperature. J. Phys. Chem. Solids 60(7), 935-942 (1999).
7. 3 substrate by metalorganic chemical vapor deposition. Z. Phys. B, Condensed Matter 102(4), 479-482 (1997).
8. 3 thin films grown on redoping n-Si by metalorganic chemical vapor deposition under reduced pressure. Appl. Phys. A, Mater. Sci. Processing 63(4), 381-384 (1996).
9. 3 films grown on indium tin oxide-coated glass by metalorganic chemical vapor deposition using the continuous cooling process. Appl. Surf. Sci. 93(4), 285-289 (1996).
10. 3 polycrystalline thin-film prepared by metalorganic chemical vapor deposition on yttrium-stabilized zirconium. Solid State Commun. 96(7), 477-480 (1995).
11. 3 thin-films grown by metal-organic chemical vapor deposition. Thin Solid Films 235(1-2), 86-95 (1993).
12. 3 thin-films by MOCVD under reduced pressure. Jpn. J. Appl. Phys. Part 1, Reg. Papers Short Notes Rev. Papers 28(6), 1030-1034 (1989).
13. M. Dekeijser, D.M. Deleeuw, P.J. Vanveldhoven, A.E.M. Deveirman, D.G. Neerinck, and G.J.M. Dormans: The structure of heteroepitaxial lead titanate layers grown by organometallic chemical vapor deposition. Thin Solid Films 266(2), 157-167 (1995).
14. 3 films on MgO(100), Jpn. J. Appl. Phys. Part 1, Regular Papers Short Notes Rev. Papers 30(9B), 2200-2203 (1991).
15. 3. Appl. Phys. Lett. 65(19), 2410-2412 (1994).
16. 3 thin films by MOCVD using an aerosol-assisted liquid delivery system. Integrated Ferroelectrics 30(1-4), 165-173 (2000).
17. 4. J. Appl. Phys. 97(3), 2005 (Art. No. 034103).
18. 4 substrates by ion-beam-assisted deposition and comparisons with ion-beam-assisted deposited yttria-stabilized-zirconia. Appl. Phys. Lett. 71(20), 2955-2957 (1997).
19. D. Chateigner, H.R. Wenk, A. Patel, M. Todd, and D.J. Barber: Analysis of preferred orientations in PST and PZT thin films on various substrates. Integrated Ferroelectrics 19(1-4), 121-140 (1998).
20. C.J. Kim, D.S. Yoon, J.S. Lee, C.G. Choi, W.J. Lee, and K. No: Electrical characteristics of (100), (111), and randomly aligned lead-zirconate-titanate thin films. J. Appl. Phys. 76(11), 7478-7482 (1994).
21. S. Mansour and R. Vest: The dependence of ferroelectric and fatigue behaviors of PZT films on microstructure and orientation. Integrated Ferroelectrics 1, 57-69 (1992).
22. A. Tripathi: In situ diagnostics for metalorganic chemical vapor deposition of YBCO. Ph.D. Thesis, California Institute of Technology, Pasadena, CA, 2001.
23. W.J. Desisto and B.J. Rappoli: Ultraviolet absorption sensors for precursor delivery rate control for metalorganic chemical vapor deposition of multiple component oxide thin films. J. Crystal Growth 191(1-2), 290-293 (1998).
24. Electron Backscatter Diffraction in Materials Science, edited by A.J. Schwartz, M. Kumar, and B.L. Adams (Kluwer Academic, New York, 2000).
25. Properties of Crystalline Silicon, edited by R. Hull (Institute of Electrical Engineers, London, U.K., 1999).
26. Thermal Expansion of Nonmetallic Solids, Vol. 13 of Thermophysical Properties of Matter, edited by Y. Touloukian, R. Kirby, R. Taylor, and T. Lee (IFI/Plenum, New York, 1977).
27. Piezoelectric Ceramics, Vol. 3 of Non-metallic Solids, edited by B. Jaffe, W.R. Cook, and H.L. Jaffe (Academic Press, New York, 1971).
28. 3. Phys. Rev. B 10(5), 1951-1959 (1974).
29. A. De Veirman, J. Cillessen, M. De Keijser, R. Wolf, D. Taylor, A. Staals, and G.J.M. Dormans: In Epitaxial Oxide Thin Films and Heterostructures, edited by D.K. Fork, J.M. Phillips, R. Ramesh, and R.M. Wolf (Mater. Res. Soc. Symp. Proc. 341, Pittsburgh, PA, 1994), pp. 329-340.
30. W.Y. Hsu and R. Raj: X-ray characterization of the domain-structure of epitaxial lead titanate thin-films on (001)-strontium-titanate. Appl. Phys. Lett. 67(6), 792-794 (1995).
31. R. Brewer: Quantitative Biaxial Texture Analysis with Reflection High-Energy Electron Diffraction for Ion Beam-Assisted Deposition of MgO and Heteroepitaxy of Perovskite Ferroelectrics; Ph.D. Thesis; California Institute of Technology, Pasadena, 2004.
32. 3 thin film. Phys. Rev. B 54(20), 14337-14340 (1996).
33. J. Speck and W. Pompe: Domain configurations due to multiple misfit relaxation mechanisms in epitaxial ferroelectric thin films. I. Theory. J. Appl. Phys. 76(1), 466-476 (1994).
34. J. Speck, A. Seifert, and W. Pompe: Domain configurations due to multiple misfit relaxation mechanisms in epitaxial ferroelectric thin films. II. Experimental verification and implications. J. Appl. Phys. 76(1), 477-483 (1994).
35. B.S. Kwak, A. Erbil, J.D. Budai, M.F. Chisholm, L.A. Boatner, and B.J. Wilkens: Domain formation and strain relaxation in epitaxial ferroelectric heterostructures. Phys. Rev. B 49(21), 14865-14879 (1994).
36. J. Speck, A. Daykin, and A. Seifert: Domain configurations due to multiple misfit relaxation mechanisms in epitaxial ferroelectric thin films. III. Interfacial defects and domain misorientations. J. Appl. Phys. 78(3), 1696-1706 (1995).
37. C. Foster, W. Pompe, A. Daykin, and J. Speck: Relative coherency strain and phase transformation history in epitaxial ferroelectric thin films. J. Appl. Phys. 79(3), 1405-1415 (1996).
38. N. Pertsev and A. Zembilgotov: Energetics and geometry of 90-degree domain structures in epitaxial ferroelectric and ferroelastic films. J. Appl. Phys. 78(10), 6170-6180 (1995).
39. N. Pertsev and A. Zembilgotov: Domain populations in epitaxial ferroelectric thin films: Theoretical calculations and comparison with experiment. J. Appl. Phys. 80(11), 6401-6406 (1996).
40. S.P. Alpay and A.L. Roytburd: Thermodynamics of polydomain heterostructures. III. Domain stability map. J. Appl. Phys. 83(9), 4714-4723 (1998).
41. G. Shirane, S. Hoshino, and K. Suzuki: X-ray study of the phase transition in lead titanate. Phys. Rev. 80(6), 1105-1106 (1950).