Segregation of phosphorus to SiO2/Si(001) interfaces

Materials Science in Semiconductor Processing

Volumn 3, Issue 1-2, 2000, Pages 85-89

  Dabrowski, J ^a   Mussig, H J ^a   Baierle, R ^b   Caldas, M J ^c   Zavodinsky, V ^d  

^a IHP   (Germany)

^b FEDERAL UNIVERSITY OF SANTA MARIA   (Brazil)

^c UNIVERSITY OF SÃO PAULO   (Brazil)

^d INSTITUTE OF AUTOMATION AND CONTROL PROCESSES   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 33645246117     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1369-8001(00)00014-7     Document Type: Article

References (21)

1. Sze SM. Physics of semiconductor devices. 2nd ed. Wiley, 1981.
2. Dabrowski J, Müssig HJ, Duane M, Dunham ST, Goossens R, Vuong H-H. Basic science and challenges in process simulation. Adv Sol State Phys 1999;38:565 PostScript file available at http://www.ihp-fTo.de/chipps/ 97/Ddoc/dpg.html.
3. Griffin PB, Crowder SW, Knight JM. Dose loss in phosphorus implants due to transient diffusion and interface segregation. Appl Phys Lett 1995;67:482.
4. Vuong H-H, Rafferty CS, Eshraghi SA, Lentz JL, Zeitzoff PM, Pinto MR, Hillenius SJ. Effects of oxide interface traps and transient enhanced diffusion on the process modeling of pMOS devices. IEEE Trans ED 1996;43:1144.
5. Orlowski M. New model for dopant redistribution at surfaces. Appl Phys Lett 1989;55:1762.
6. 2 interface, SISPAD, 97, 81 1997.
7. 2 interface on CMOS device characteristics, SISPAD, 97, 85 1997.
8. 2 interface, SISPAD, 98, 380 1998.
9. 2 interface during TED, SISPAD, 98, 48 1998.
10. 2 interface. Appl Phys A 1989;49:671.
11. Bockstedte M, Kley A, Neugebauer J, Scheffler M. DFT calculations for poly-atomic systems: electronic structure, static and elastic properties and ab initio molecular dynamics. Comp Phys Commun 1997;107:187.
12. Ceperley DM, Alder BJ. Ground state of the electron gas by a stochastic method. Phys Rev Lett 1980;45:567.
13. Perdew JP, Zunger A. Self-interaction correction to density-functional approximations for many-electron systems. Phys Rev 1981;B23:5048.
14. Hamann DR. Generalized norm-conserving pseudopotentials. Phys Rev 1982;B40:2980.
15. Kleinman L, Bylander DM. Efficacious form for model pseudopotentials. Phys Rev Lett 1982;48:1425.
16. Bott E, Methfessel M, Krabs W, Schmidt PC. Nonsingular Hankel functions as a new basis for electronic structure calculations. J Mat Phys 1998;39 M. Methfessel, NFP manual, IHP Copyright, 1997.
17. Sanchez-Portal D, Ordejon P, Artacho E, Soler JM. Density-functional method for very large systems with LCAO basis-set. Int J Quantum Chem 1997;65:453.
18. Da̧browski J, Müssig H-J, Wolff G, Hinrich S. Surface reconstruction suggests a nucleation mechanism in bulk: Sb/Si(113) and {113} planar defects. Surf Sci 1998;411:54.
19. Pandey KC. Diffusion without vacancies or interstitials: a new concerted exchange mechanism. Phys Rev Lett 1986;57:2287.
20. 2/Si interface. J Electrochem Soc 1993;140:2679.
21. Bachelet GB, Hamann DR, Schlüter MA. Pseudopotentials that work: from H to Pu. Phys Rev 1982;B26:4199.