Study on defects and confined energy level of InAs/GaAs quantum dot system

Physica B: Condensed Matter

Volumn 376-377, Issue 1, 2006, Pages 877-880

  Kim, J S ^a   Kim, E K ^a   Lee, S J ^b   Noh, S K ^b  

^a Hanyang University   (South Korea)

^b Korea Research Institute of Standards and Science   (South Korea)

Author keywords

Deep level transient spectroscopy; Energy level; InAs GaAs; Quantum dots

Indexed keywords

DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRON ENERGY LEVELS; HYDROGEN; PLASMA APPLICATIONS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

CAPACITANCE-VOLTAGE; HYDROGEN PLASMA TREATMENT; INAS/GAAS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 33645229829     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2005.12.219     Document Type: Conference Paper

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