Charge state dependence of the diffusivity of interstitial Fe in silicon detected by Mössbauer spectroscopy

Applied Physics Letters

Volumn 80, Issue 15, 2002, Pages 2657-2659

  Gunnlaugsson, H P ^a   Weyer, G ^a   Dietrich, M ^b   Fanciulli, M ^c   Bharuth Ram, K ^d   Sielemann, R ^e  

^a AARHUS UNIVERSITY   (Denmark)

^b CERN   (Switzerland)

^c LABORATORIO MDM   (Italy)

^d UNIVERSITY OF KWAZULU NATAL   (South Africa)

^e HAHN MEITNER INSTITUT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE STATE; DOPED MATERIALS; FE ATOMS; LINE BROADENING; MOSSBAUER; SSBAUER SPECTROSCOPIES;

ATOMIC SPECTROSCOPY; DIFFUSION; MANGANESE;

EXCITED STATES;

EID: 79958233604     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1469216     Document Type: Article

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