Assessment of heteroepitaxial ZnSe layers on GaAs by means of grazing incident X-ray topography

Physica B: Condensed Matter

Volumn 376-377, Issue 1, 2006, Pages 782-785

  Mizuno, K ^a   Kobayashi, T ^a   Fujiki, F ^a   Okamoto, H ^b   Prete, P ^c   Lovergine, N ^d  

^a SHIMANE UNIVERSITY   (Japan)

^b KANAZAWA UNIVERSITY   (Japan)

^c CNR   (Italy)

^d UNIVERSITY OF SALENTO   (Italy)

Author keywords

Grazing incident; Heteroepitaxial thin layers; MOVPE; X ray topography; ZnSe GaAs

Indexed keywords

CRYSTALS; EPITAXIAL GROWTH; METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTING GALLIUM; X RAY RADIOGRAPHY;

GRAZING INCIDENT; HETEROEPITAXIAL THIN LAYERS; X-RAY TOPOGRAPHY; ZNSE/GAAS;

SEMICONDUCTING ZINC COMPOUNDS;

EID: 33645145050     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2005.12.196     Document Type: Conference Paper

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