Grazing incident X-ray topographs of heteroepitaxial ZnSe films on GaAs substrates

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 43, Issue 3 A, 2004, Pages

  Mizuno, Kaoru ^a   Fujiki, Fumiaki ^a   Okamoto, Hiroyuki ^b   Prete, Paola ^c   Lovergine, Nico ^d  

^a SHIMANE UNIVERSITY   (Japan)

^b KANAZAWA UNIVERSITY   (Japan)

^c IME CNR   (Italy)

^d INFM   (Italy)

Author keywords

Grazing incident; Heteroepltaxial semiconductor; Topography; ZnSe GaAs

Indexed keywords

DIFFRACTION; DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; GALLIUM COMPOUNDS; LIGHT REFLECTION; NUCLEATION; RELAXATION PROCESSES; SEMICONDUCTOR MATERIALS; STRAIN; SURFACE TOPOGRAPHY; SYNCHROTRON RADIATION; THIN FILMS; X RAYS;

GRAZING INCIDENT; HETEROEPITAXIAL SEMICONDUCTORS; TOPOGRAPHY; ZNSE/GAAS;

ZINC COMPOUNDS;

EID: 2442615190     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.43.l321     Document Type: Article

References (5)

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