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Volumn 38, Issue 6 A, 1999, Pages 3628-3631

Strain relaxation in InGaAs epilayers on GaAs by means of twin formation

Author keywords

[No Author keywords available]

Indexed keywords

DISLOCATIONS (CRYSTALS); MOLECULAR BEAM EPITAXY; RELAXATION PROCESSES; SEMICONDUCTING GALLIUM ARSENIDE; SUBSTRATES; SYNCHROTRON RADIATION; TWINNING;

EID: 0032631331     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.3628     Document Type: Article
Times cited : (2)

References (12)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.