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Volumn 38, Issue 6 A, 1999, Pages 3628-3631
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Strain relaxation in InGaAs epilayers on GaAs by means of twin formation
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Author keywords
[No Author keywords available]
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Indexed keywords
DISLOCATIONS (CRYSTALS);
MOLECULAR BEAM EPITAXY;
RELAXATION PROCESSES;
SEMICONDUCTING GALLIUM ARSENIDE;
SUBSTRATES;
SYNCHROTRON RADIATION;
TWINNING;
MONOCHROMATIC SYNCHROTRON X-RADIATION TOPOGRAPHY;
STRAIN RELAXATION;
SEMICONDUCTING INDIUM GALLIUM ARSENIDE;
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EID: 0032631331
PISSN: 00214922
EISSN: None
Source Type: Journal
DOI: 10.1143/jjap.38.3628 Document Type: Article |
Times cited : (2)
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References (12)
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