Numerical modeling of electromagnetic resonance enhanced silicon metal-semiconductor-metal photodetectors

Optics Express

Volumn 14, Issue 6, 2006, Pages 2047-2061

  Crouse, David ^a   Arend, Mark ^a   Zou, Jianping ^a   Keshavareddy, Pavan ^a  

^a City University of New York   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALGORITHMS; CHANNEL CAPACITY; ELECTRIC FIELDS; ELECTROMAGNETIC FIELDS; ELECTROMAGNETIC WAVE DIFFRACTION; ELECTROMAGNETIC WAVES; LIGHT POLARIZATION; PHOTOCURRENTS; PLASMAS; RESONANCE; SEMICONDUCTING SILICON; WAVE INTERFERENCE;

INTER-SYMBOL INTERFERENCE (ISI); OPTICAL; PLASMONS; POYNTING VECTOR; PSEUDO-RANDOM BIT SEQUENCE (PRBS); QUALITY FACTORS; QUASI-STATIC ELECTRIC FIELD;

PHOTODETECTORS;

EID: 33645105412     PISSN: 10944087     EISSN: 10944087     Source Type: Journal    
DOI: 10.1364/OE.14.002047     Document Type: Article

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