High-speed monolithic silicon photoreceiver fabricated on SOI

IEEE Photonics Technology Letters

Volumn 12, Issue 8, 2000, Pages 1046-1048

  Li, R ^a   Schaub, J D ^a   Csutak, S M ^a   Campbell, J C ^a  

^a The University of Texas at Austin   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMPLIFIERS (ELECTRONIC); BIT ERROR RATE; ELECTRIC IMPEDANCE; ELECTRIC POWER SUPPLIES TO APPARATUS; GAIN MEASUREMENT; INTEGRATED CIRCUIT MANUFACTURE; MONOLITHIC INTEGRATED CIRCUITS; MOS DEVICES; PHOTODIODES; SIGNAL RECEIVERS; SILICON ON INSULATOR TECHNOLOGY; SUBSTRATES;

MONOLITHIC SILICON PHOTORECEIVER; OPTICAL RECEIVERS; TRANSIMPEDANCE GAIN; TRANSIMPEDANCE PREAMPLIFIER;

PHOTODETECTORS;

EID: 0342572555     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.868003     Document Type: Article

References (13)

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