Wide-band matched LNA design using transistor's intrinsic gate-drain capacitor

IEEE Transactions on Microwave Theory and Techniques

Volumn 54, Issue 3, 2006, Pages 1277-1286

  Hu, Robert ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

Input matching; Low noise amplifier (LNA); Noise parameters; Noise temperature; Wide band

Indexed keywords

BANDWIDTH; ELECTRIC IMPEDANCE; FEEDBACK CONTROL; GATES (TRANSISTOR); THERMAL EFFECTS;

INPUT MATCHING; LOW-NOISE AMPLIFIER (LNA); NOISE PARAMETERS; NOISE TEMPERATURE; WIDE-BAND;

CAPACITORS;

EID: 33644974517     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMTT.2006.869703     Document Type: Article

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