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Volumn 504, Issue 1-2, 2006, Pages 95-100
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A study of Si/SiGe selective epitaxial growth by experimental design approach
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Author keywords
Chemical vapor deposition processes; Doping; Germanium silicon alloys
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Indexed keywords
CHEMICAL VAPOR DEPOSITION;
GERMANIUM COMPOUNDS;
OPTICAL DESIGN;
SEMICONDUCTOR DOPING;
SILICON COMPOUNDS;
TEMPERATURE CONTROL;
X RAY DIFFRACTION;
JMP STATISTICAL DISCOVERY SOFTWARE;
PARETO PLOTS;
REAL MANUFACTURING ENVIRONMENT;
SELECTIVE EPITAXIAL GROWTH;
EPITAXIAL GROWTH;
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EID: 33644931597
PISSN: 00406090
EISSN: None
Source Type: Journal
DOI: 10.1016/j.tsf.2005.09.049 Document Type: Conference Paper |
Times cited : (9)
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References (12)
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