High-sensitivity NO2 sensor based on n-type InP epitaxial layers

Optica Applicata

Volumn 35, Issue 4, 2005, Pages 655-662

  Wierzbowska, Katarzyna ^a   Adamowicz, Bogusława ^b   Mazet, Lionel ^a   Brunet, Jérôme ^a   Pauly, Alain ^a   Bideux, Luc ^a   Varenne, Christelle ^a   Berry, Laure ^a   Germain, Jean Paul ^a  

^a UNIVERSITÉ CLERMONT AUVERGNE   (France)

^b SILESIAN UNIVERSITY OF TECHNOLOGY   (Poland)

Author keywords

Computer simulations; Epitaxial layers; Gas sensors; Indium phosphide; Resistance; Surface states

Indexed keywords

COMPOSITION; COMPUTER SIMULATION; ELECTRIC RESISTANCE; EPITAXIAL GROWTH; SEMICONDUCTING INDIUM PHOSPHIDE; X RAY PHOTOELECTRON SPECTROSCOPY; INDIUM COMPOUNDS; STABILITY; SURFACE PROPERTIES;

EPITAXIAL LAYERS; INDIUM PHOSPHIDE; SURFACE STATES; RESISTANCE;

CHEMICAL SENSORS;

EID: 33644921221     PISSN: 00785466     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Conference Paper

References (11)

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