Rigorous analysis of the electronic properties of InP interfaces for gas sensing

Thin Solid Films

Volumn 436, Issue 1, 2003, Pages 101-106

  Adamowicz, B ^a   Miczek, M ^a   Brun, C ^b   Gruzza, B ^b   Hasegawa, H ^c  

^a SILESIAN UNIVERSITY OF TECHNOLOGY   (Poland)

^b UNIVERSITÉ CLERMONT AUVERGNE   (France)

^c HOKKAIDO UNIVERSITY   (Japan)

Author keywords

Electronic properties; Fermi level; Gas sensing; InP; Interfaces; Surface states

Indexed keywords

ADSORPTION; CHEMICAL SENSORS; ELECTRONIC PROPERTIES; ENERGY GAP; FERMI LEVEL; INTERFACES (MATERIALS); LIGHTING; SEMICONDUCTOR DOPING;

GAS SENSING;

SEMICONDUCTING INDIUM PHOSPHIDE;

EID: 0038717100     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(03)00519-4     Document Type: Conference Paper

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