Growth condition dependence of photoluminescence of Eu-doped GaN films prepared by radio frequency magnetron sputtering

Optical Materials

Volumn 28, Issue 6-7, 2006, Pages 742-745

  Yudate, Shinji ^a   Sasaki, Ryo ^a   Kataoka, Takashi ^a   Shirakata, Sho ^a  

^a EHIME UNIVERSITY   (Japan)

Author keywords

Compound source magnetron sputtering; Eu doped GaN layers; Photoluminescence; X ray diffraction

Indexed keywords

MAGNETRON SPUTTERING; PHOTOLUMINESCENCE; SAPPHIRE; SEMICONDUCTOR DOPING; THIN FILMS; X RAY DIFFRACTION ANALYSIS;

COMPOUND SOURCE MAGNETRON SPUTTERING; EU-DOPED GAN LAYERS; SAPPHIRE SUBSTRATE;

GALLIUM NITRIDE;

EID: 33644884985     PISSN: 09253467     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.optmat.2005.09.013     Document Type: Conference Paper

References (6)

1. D.S. Lee, and A.J. Steckl Appl. Phys. Lett. 81 2002 2331
2. H.J. Lozykowski, and W.M. Jadwisienczak Appl. Phys. Lett. 74 1998 1129
3. J.H. Kim, and P.H. Holloway J. Appl. Phys. 95 9 2004
4. S.B. Aldabergenova, M. Albrecht, A.A. Andreev, C. Inglefield, J. Viner, V.Yu. Davydov, P.C. Taylor, and H.P. Strunk J. Non-Cryst. Solids 283 2001 173
5. S. Shirakata, R. Sasaki, and T. Kataoka Appl. Phys. Lett. 85 2004 2247
6. Z. Li, H. Bang, G. Piao, J. Sawahata, and K. Akimoto J. Cryst. Growth 240 2002 382