Optical properties of GaN/AlN quantum boxes under high photo-excitation

Physica Status Solidi C: Conferences

Volumn , Issue 7, 2003, Pages 2666-2669

  Kalliakos, S ^a   Bretagnon, T ^a   Lefebvre, P ^a   Juillaguet, S ^a   Taliercio, T ^a   Valvin, P ^a   Gil, B ^a   Grandjean, N ^b   Dussaigne, A ^b   Damilano, B ^b   Massies, J ^b  

^a UNIVERSITÉ MONTPELLIER 2   (France)

^b CRHEA CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER RECOMBINATION TIME; CONTINUOUS WAVES; EXCITATION DENSITY; GAN/ALN QUANTUM DOTS; INTERNAL ELECTRIC FIELDS; PHOTO-EXCITATIONS; TIME-RESOLVED PHOTOLUMINESCENCE; TRANSITION ENERGY;

ELECTRIC FIELDS; NITRIDES;

OPTICAL PROPERTIES;

EID: 33644830103     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200303270     Document Type: Conference Paper

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