Galvanic corrosion between copper and tantalum under CMP conditions

Journal of the Electrochemical Society

Volumn 153, Issue 4, 2006, Pages

  Tamilmani, Subramanian ^a,c   Huang, Wayne ^a,d   Raghavan, Srini ^a,b  

^a University of Arizona   (United States)

^b ELECTROCHEMICAL SOCIETY   (United States)

^c INTEL CORPORATION   (United States)

^d MICRON TECHNOLOGY INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BARRIER POLISHING; CHEMICAL MECHANICAL PLANARIZATION (CMP); CHEMICAL SYSTEMS; GALVANIC CORROSION;

COPPER; CORROSION; ELECTROCHEMISTRY; INTEGRATED CIRCUITS; POLARIZATION; TANTALUM; THIN FILMS;

CHEMICAL POLISHING;

EID: 33644801704     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2170583     Document Type: Article

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