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Thin Solid Films

Volumn 503, Issue 1-2, 2006, Pages 13-17

Structure of oxygen-doped Ge:Sb:Te films

(6) Gonzalez Hernandez J a,e Herrera Fierro, P b Chao, B b Kovalenko, Yu c Morales Sanchez E d Prokhorov, E e

a CENTRO DE INVESTIGACIÓN EN MATERIALES AVANZADOS (Mexico)

b Energy Conversion Devices Inc (United States)

c Centro de Tecnologia Avanzada Mexico (Mexico)

d UNIVERSIDAD AUTÓNOMA DEL ESTADO DE HIDALGO (Mexico)

e DEPARTAMENTO DE FÍSICA (Mexico)

Author keywords

Amorphous materials; Crystallization; X ray photoelectron spectroscopy (XPS)

Indexed keywords

AMORPHOUS OXIDES; GERMANIUM OXIDE; NUCLEATION CENTERS;

AMORPHOUS MATERIALS; CRYSTALLIZATION; DOPING (ADDITIVES); OXYGEN; TELLURIUM; X RAY PHOTOELECTRON SPECTROSCOPY;

THIN FILMS;

EID: 33644797416 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/j.tsf.2005.09.201 Document Type: Article

Times cited : (15)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.