Electron-impact total ionization cross sections of silicon and germanium hydrides

Journal of Chemical Physics

Volumn 106, Issue 23, 1997, Pages 9602-9608

  Ali, M A ^a   Kim, Y K ^b   Hwang, W ^b,d   Weinberger, N M ^b,e   Rudd, M E ^c  

^a HOWARD UNIVERSITY   (United States)

^b NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

^c UNIVERSITY OF NEBRASKA LINCOLN   (United States)

^d SAMSUNG Electronics   (South Korea)

^e UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001751482     PISSN: 00219606     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.473842     Document Type: Article

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